2009. 2. 19 1/3 semiconductor technical data TT1A6C bi-directional triode thyristor 1a mold triac revision no : 0 ac power control application. features h repetitive peak off-state voltage : v drm =600v. h r.m.s on-state current : i t(rms) =1a. h high commutation (dv/dt) applications h switching mode power supply h speed control of small motors h solid state relay h light dimmer h washing machine h temperature control of heater to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. t1 3. t2 2. gate + _ characteristic symbol rating unit repetitive peak off-state voltage v drm 600 v r.m.s on-state current (full sine waveform tc=50 ? ) i t(rms) 1 a peak one cycle surge on-state current (non-repetitive) i tsm 10 (60hz 1 cycle) a i 2 t limit value (t=8.3ms) i 2 t 0.6 a 2 s peak gate power dissipation p gm 1 w average gate power dissipation (t c =80 ? , t " 8.3ms) p g(av) 0.1 w peak gate voltage (t " 2.0 k , t c =80 ? ) v gm 5 v peak gate current (t " 2.0 k , t c =80 ? ) i gm 1 a junction temperature t j -40 q 125 ? maximum ratings (ta=25 ? )
2009. 2. 19 2/3 TT1A6C revision no : 0 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit repetitive peak off-state current i drm v drm =rated, gate open - - 10 a gate trigger voltage v gt v d =12v, r l =100 ? t 2 (+), gate(+) - - 2.0 v ? t 2 (+), gate(-) - - 2.0 ? t 2 (-), gate(-) - - 2.0 e t 2 (-), gate(+) - - 2.5 gate trigger current i gt t 2 (+), gate(+) - - 5.0 ma ? t 2 (+), gate(-) - - 5.0 ? t 2 (-), gate(-) - - 5.0 e t 2 (-), gate(+) - - 7 peak on-state voltage v tm i tm =1a - - 1.9 v gate non-trigger voltage v gd v d =12v, r l =100 ? , t j =110 ? 0.1 - - v holding current i h v d =12v, i tm = ? 200ma - - 10 ma thermal resistance r th(j-c) junction to case, ac - - 75 ? /w r th(j-a) junction to ambient, ac - - 150
2009. 2. 19 3/3 TT1A6C revision no : 0 instantaneous gate voltage (v) g instantaneous gate current (ma) g gate trigger characteristic 0 time t (ms and s) th(j-a) th(j-c) r , r - t r.m.s on-state current i (a) t(rms) t(rms) p - i instantaneous on-state voltage (v) t t t number of cycles at 60hz surge on-state current peak surge on-state current i (a) 0.6 1.0 1.2 1.4 0.2 0 0.4 0.8 00.2 0 20 instantaneous on-state current (a) t average on-state power dissipation p (w) temperature tc max, ta max ( c) maximum allowable case ambient t(rms) r.m.s on-state current i (a) tc max, ta max - i t(rms) r , r ( c/w) transient thermal impedance th(j-c) ? 13 0.1 0.3 0.5 1 3 5 300 1k 100 30 10 10 -40 c i gt 25 c i gt v =0.2v gd p =1w gm 25 c v gt g(av) p =0.1w gm i gm v v =6v gm gt -40 c v 0.05 0.03 0.4 t =25 c 0.1 0.5 0.3 3 1 5 j 0.8 1.2 1.6 2.0 2.4 2.8 0 135103050100 2 4 6 8 10 tsm (non-repetitive) 0.4 0.6 0.8 1.0 1.2 1.4 t(av) t(av) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 40 60 80 100 120 140 ta max tc max 131030 200 100 300 1k 1 3 5 10 30 50 100 r th(j-a) th(j-a) th(j-c) r (s) (s) (ms)
|
